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BSC0503NSI Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSC0503NSI Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 13 page 6 OptiMOSTM5Power-MOSFET,30V BSC0503NSI Rev.2.0,2015-07-13 Final Data Sheet Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.5 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.5 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 1.8 - nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 2.8 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 7.1 9.5 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.6 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total 2) Qg - 15 20 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 6.5 - nC VDS=0.1V,VGS=0to4.5V Output charge 2) Qoss - 10.6 14.3 nC VDD=15V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 36 A TC=25°C Diode pulse current IS,pulse - - 352 A TC=25°C Diode forward voltage VSD - 0.54 0.65 V VGS=0V,IF=4A,Tj=25°C Reverse recovery charge Qrr - 12 - nC VR=15V,IF=IS,diF/dt=400A/µs 1) See ″Gate charge waveforms″ for parameter definition 2) Defined by design. Not subject to production test |
Similar Part No. - BSC0503NSI_15 |
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Similar Description - BSC0503NSI_15 |
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