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BLM138K Datasheet(PDF) 1 Page - SHANGHAI BELLING CO., LTD.

Part # BLM138K
Description  N-Channel Enhancement Mode Power MOSFET
Download  6 Pages
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Manufacturer  BELLING [SHANGHAI BELLING CO., LTD.]
Direct Link  http://www.belling.com.cn
Logo BELLING - SHANGHAI BELLING CO., LTD.

BLM138K Datasheet(HTML) 1 Page - SHANGHAI BELLING CO., LTD.

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V2.0
1
BLM138K
Pb Free Product
N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
●
VDS = 50V,ID = 0.22A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating：HBM 2300V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Application
●
Direct Logic-Level Interface: TTL/CMOS
●
Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●
Battery Operated Systems
●
Solid-State Relays
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
138K
BLM138K
SOT-23
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
0.22
A
Drain Current-Pulsed (Note 1)
IDM
0.88
A
Maximum Power Dissipation
PD
0.35
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
/W
℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
50
65
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=50V,VGS=0V
-
-
1
μA


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