Electronic Components Datasheet Search |
|
BUK962R6-40E Datasheet(PDF) 7 Page - NXP Semiconductors |
|
BUK962R6-40E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK962R6-40E N-channel TrenchMOS logic level FET BUK962R6-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 7 / 13 003aah307 0 100 200 300 400 0 1 2 3 4 5 VGS(V) ID (A) Tj = 25 °C Tj = 175 °C Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah025 0 0.5 1 1.5 2 2.5 3 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 9. Gate-source threshold voltage as a function of junction temperature 003aah026 10-6 10-5 10-4 10-3 10-2 10-1 0 1 2 3 VGS (V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003aah310 0 2.5 5 7.5 10 0 120 240 360 ID(A) RDSon (mΩ) VGS(V) = 10 5 2.8 2.6 3 3.5 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
Similar Part No. - BUK962R6-40E_15 |
|
Similar Description - BUK962R6-40E_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |