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BUK6217-55C Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK6217-55C Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK6217-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 — 9 July 2012 8 of 14 NXP Semiconductors BUK6217-55C N-channel TrenchMOS intermediate level FET Fig 9. Sub-threshold drain current as a function of gate-source voltage Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad806 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 4 VGS (V) ID (A) max typ min 003aad805 0 1 2 3 4 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 003aae803 0 20 40 60 80 0 25 50 75 100 ID(A) RDSon (m Ω) 8.0 6.0 4.5 10 VGS(V) = 5.0 3.8 4.0 003aad803 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( °C) a |
Similar Part No. - BUK6217-55C_15 |
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Similar Description - BUK6217-55C_15 |
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