1.

Product profile

1.1 General description

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

environments due to 175 °C rating

rating of greater than 1V at 175 °C

1.3 Applications

switching

1.4 Quick reference data

[1]

Continuous current is limited by package.

BUK768R1-40E

N-channel TrenchMOS standard level FET

Rev. 1.1 — 10 July 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

40

V

drain current

see Figure 1

[1]

--75

A

total power dissipation

--96

W

Static characteristics

drain-source on-state resistance

see Figure 11

-5.6

7.2

m

Ω

Dynamic characteristics

gate-drain charge

see Figure 14

-7.4

-nC