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ABS6-T Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ABS6-T Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Glass passivated junction - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test SYMBOL Unit VRRM V VRMS V VDC V I 2tA2s TJ OC TSTG OC Document Number: DS_D1404019 Version: A14 TJ = 25℃ IFSM A TJ = 125℃ - 55 to +150 OC/W Operating junction temperature range - 55 to +150 Maximum DC reverse current TJ=25 ℃ at rated DC blocking voltage TJ=125℃ TJ = 125℃ 60 50 ABS Maximum average forward rectified current On glass-epoxy On aluminum substrate IF(AV) 0.8 1.0 A 800 30 25 Peak forward surge current, 8.3 ms single half sine-wave Polarity: Polarity as marked on the body 0.95 Peak forward surge current, 1.0 ms single half sine-wave TJ = 25℃ IFSM A Rating for fusing (t<8.3ms) 3.74 Maximum instantaneous forward voltage (Note 1) IF= 0.4 A VF V Note 1: Pulse test with PW=300μs, 1% duty cycle Typical thermal resistance RθJL RθJA 25 80 Storage temperature range 420 600 IR 10 150 μA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: Molded plastic body ABS6-T ABS8-T ABS10-T 700 1000 ABS6-T thru ABS10-T Taiwan Semiconductor Glass Passivated Bridge Rectifiers FEATURES - Moisture sensitivity level: level 1, per J-STD-020 Marking code Weight: 0.12 g (approximately) ABS6 ABS8 ABS10 560 800 Maximum DC blocking voltage Maximum repetitive peak reverse voltage Maximum RMS voltage 600 1000 |
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