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NX3008PBKMB Datasheet(PDF) 4 Page - NXP Semiconductors |
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NX3008PBKMB Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page NX3008PBKMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 11 May 2012 4 of 15 NXP Semiconductors NX3008PBKMB 30 V, single P-channel Trench MOSFET 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage aaa-002632 -10 ID (A) -10-2 VDS (V) -10-1 -102 -10 -1 -1 -10-1 limit RDSon = VDS / ID (1) (4) (5) (3) (2) Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - 305 360 K/W [2] - 150 175 K/W Rth(j-sp) thermal resistance from junction to solder point --40 K/W |
Similar Part No. - NX3008PBKMB_15 |
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Similar Description - NX3008PBKMB_15 |
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