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NX3008PBKMB Datasheet(PDF) 4 Page - NXP Semiconductors

Part # NX3008PBKMB
Description  30 V, single P-channel Trench MOSFET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NX3008PBKMB Datasheet(HTML) 4 Page - NXP Semiconductors

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NX3008PBKMB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 11 May 2012
4 of 15
NXP Semiconductors
NX3008PBKMB
30 V, single P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
aaa-002632
-10
ID
(A)
-10-2
VDS (V)
-10-1
-102
-10
-1
-1
-10-1
limit RDSon = VDS / ID
(1)
(4)
(5)
(3)
(2)
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
305
360
K/W
[2]
-
150
175
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
--40
K/W


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