PMDPB55XP

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Product data sheet

Rev. 3 — 4 June 2012

7 of 15

NXP Semiconductors

PMDPB55XP

20 V, dual P-channel Trench MOSFET

(1) minimum values

(2) typical values

(3) maximum values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

017aaa411

0-3

-2

-1

-2

-1

-3

-4

(A)

0

-4.5 V

-2.5 V

-1.8 V

-1.0 V

-1.4 V

017aaa412

(A)

0

-1.25

-1.00

-0.50

-0.75

-0.25

(1)

(2)

(3)

0-4

-3

-1

-2

017aaa413

-0.08

-0.16

-0.24

(Ω)

0

-1.2 V

-1.6 V

-2.5 V

-4.5 V

0-4

-3

-1

-2

017aaa414

0.4

0.6

0.2

0.8

1.0

(Ω)

0

(1)

(2)