PMFPB8040XP_15 datasheet(8/16 Pages) PHILIPS

Part #	PMFPB8040XP

Description	20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

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NXP Semiconductors

PMFPB8040XP

20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

PMFPB8040XP

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Product data sheet

21 December 2012

8 / 16

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ciss

input capacitance

-

550

-

pF

Coss

output capacitance

-

63

-

pF

Crss

reverse transfer

capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

53

-

pF

td(on)

turn-on delay time

-

6

-

ns

tr

rise time

-

14

-

ns

td(off)

turn-off delay time

-

120

-

ns

tf

fall time

VDS = -10 V; ID = -2.4 A; VGS = -4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

50

-

ns

MOSFET transistor source-drain diode

VSD

source-drain voltage

IS = -1.1 A; VGS = 0 V; Tj = 25 °C

-

-0.8

-1.2

V

Schottky diode

IF = 100 mA; Tj = 25 °C

-

330

390

mV

IF = 500 mA; Tj = 25 °C

-

400

460

mV

VF

forward voltage

IF = 1 A; Tj = 25 °C

-

440

520

mV

VR = 5 V; Tj = 25 °C

-

1

3.5

µA

VR = 5 V; Tj = 125 °C

-

0.33

1.2

mA

VR = 10 V; Tj = 25 °C

-

2

5

µA

VR = 20 V; Tj = 25 °C

-

4

15

µA

IR

reverse current

VR = 30 V; Tj = 25 °C

-

8

30

µA

Cd

diode capacitance

VR = 5 V; f = 1 MHz; Tj = 25 °C

-

45

55

pF

VDS (V)

0

-4

-3

-1

-2

017aaa531

-4

-6

-2

-8

-10

ID

(A)

0

VGS = -1.8 V

-10 V

-4.5 V

-2.5 V

-2 V

-1.6 V

-1.5 V

-1.4 V

-1.2 V

-1 V

Tj = 25 °C

Fig. 8. MOSFET transistor: Output characteristics:

drain current as a function of drain-source

voltage; typical values

017aaa532

-10-4

-10-3

ID

(A)

-10-5

VGS (V)

0

-1.00

-0.75

-0.25

-0.50

min

typ

max

Tj = 25 °C; VDS = -5 V

Fig. 9. MOSFET transistor: Subthreshold drain current

as a function of gate-source voltage

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