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IPB17N25S3-100 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPB17N25S3-100
Description  N-channel - Enhancement mode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPB17N25S3-100 Datasheet(HTML) 6 Page - Infineon Technologies AG

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IPB17N25S3-100
IPP17N25S3-100
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C
= f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
25 °C
175 °C
100
101
102
103
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD [V]
54 µA
540 µA
1.5
2
2.5
3
3.5
4
-60
-20
20
60
100
140
180
T
j [°C]
Ciss
Coss
Crss
102
103
104
0
5
10
15
20
25
30
V
DS [V]
101
25 °C
100 °C
150 °C
0.1
1
10
100
0.1
1
10
100
1000
10000
t
AV [µs]
25 °C
175 °C
100
101
102
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD [V]
Rev. 1.1
page 6
2013-05-13


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