SQ3460EV_15 datasheet(1/12 Pages) VISHAY

Part #	SQ3460EV

Description	Automotive N-Channel 20 V (D-S) 175 °C MOSFET

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SQ3460EV

www.vishay.com

Vishay Siliconix

S11-2359-Rev. D, 05-Dec-11

1

Document Number: 67037

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

20

RDS(on) () at VGS = 4.5 V

0.030

RDS(on) () at VGS = 2.5 V

0.034

RDS(on) () at VGS = 1.8 V

0.038

ID (A)

8

Configuration

Single

N-Channel MOSFET

(3) G

(1, 2, 5, 6) D

(4) S

TSOP-6

Top V iew

6

4

1

2

3

5

2.85 mm

3 mm

Marking Code: 8Jxxx

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and Halogen-free

SQ3460EV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current

TC = 25 °Ca

ID

8

A

TC = 125 °C

4.8

Continuous Source Current (Diode Conduction)

IS

4.6

Pulsed Drain Currentb

IDM

32

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5mJ

Maximum Power Dissipationb

TC = 25 °C

PD

3.6

W

TC = 125 °C

1.2

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

110

°C/W

Junction-to-Foot (Drain)

RthJF

41

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SQ3460EV Datasheet(PDF) 1 Page - Vishay Siliconix

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