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SQ4153EY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ4153EY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQ4153EY www.vishay.com Vishay Siliconix S15-2200, Rev. A, 14-Sep-15 1 Document Number: 66897 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 12 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) -12 RDS(on) ( Ω) at VGS = -4.5 V 0.0065 RDS(on) ( Ω) at VGS = -2.5 V 0.0080 RDS(on) ( Ω) at VGS = -1.8 V 0.0130 ID (A) -25 Configuration Single Package SO-8 S G D P-Channel MOSFET Top View SO-8 Single 1 S 2 S 3 S 1 2 S 3 S 4 G D 7 D 6 D 5 D 8 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current a TC = 25 °C ID -25 A TC = 125 °C -14 Continuous Source Current (Diode Conduction) a IS -6.5 Pulsed Drain Current b IDM -100 Single Pulse Avalanche Current L = 0.1 mH IAS -19 Single Pulse Avalanche Energy EAS 18 mJ Maximum Power Dissipation b TC = 25 °C PD 7.1 W TC = 125 °C 2.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 85 °C/W Junction-to-Foot (Drain) RthJF 21 |
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Similar Description - SQ4153EY_15 |
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