SQ4435EY_15 datasheet(1/10 Pages) VISHAY

Part #	SQ4435EY

Description	Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ4435EY

www.vishay.com

Vishay Siliconix

S11-2109 Rev. B, 31-Oct-11

1

Document Number: 67932

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedc

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

- 30

RDS(on) () at VGS = - 10 V

0.018

RDS(on) () at VGS = - 4.5 V

0.031

ID (A)

- 15

Configuration

Single

S

G

D

P-Channel MOSFET

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

ORDERING INFORMATION

Package

SO-8

Lead (Pb)-free and Halogen-free

SQ4435EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

- 15

A

TC = 125 °C

- 8.7

Continuous Source Current (Diode Conduction)

IS

- 6.2

Pulsed Drain Currenta

IDM

- 60

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 25

Single Pulse Avalanche Energy

EAS

31

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

6.8

W

TC = 125 °C

2.3

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountb

RthJA

85

°C/W

Junction-to-Foot (Drain)

RthJF

22

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