SQ4470EY_15 datasheet(1/12 Pages) VISHAY

Part #	SQ4470EY

Description	Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQ4470EY

www.vishay.com

Vishay Siliconix

S12-1845-Rev. C, 30-Jul-12

1

Document Number: 65673

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedc

•100 % Rg and UIS Tested

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

60

RDS(on) () at VGS = 10 V

0.012

RDS(on) () at VGS = 6 V

0.014

ID (A)

16

Configuration

Single

D

G

S

N-Channel MOSFET

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

ORDERING INFORMATION

Package

SO-8

Lead (Pb)-free and Halogen-free

SQ4470EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

16

A

TC = 125 °C

9

Continuous Source Current (Diode Conduction)

IS

6

Pulsed Drain Currenta

IDM

67

Single Pulse Avalanche Current

L = 0.1 mH

IAS

50

Single Pulse Avalanche Energy

EAS

125

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

7.1

W

TC = 125 °C

2.3

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountb

RthJA

80

°C/W

Junction-to-Foot (Drain)

RthJF

21

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