PSMN2R0-60PS_15 datasheet(1/14 Pages) PHILIPS

Part #	PSMN2R0-60PS

Description	N-channel 60 V 2.2 m廓 standard level MOSFET in TO-220

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Manufacturer	PHILIPS [NXP Semiconductors]

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PSMN2R0-60PS

N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220

4 October 2012

Product data sheet

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1. Product profile

1.1 General description

Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and domestic equipment.

1.2 Features and benefits

• High efficiency due to low switching and conduction losses

• Suitable for standard level gate drive sources

1.3 Applications

• DC-to-DC converters

• Load switching

• Motor control

• Server power supplies

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

60

V

ID

drain current

Tmb = 25 °C; VGS = 10 V; Fig. 1

[1]

-

120

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

338

W

Tj

junction temperature

-55

-

175

°C

Static characteristics

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

[2]

-

1.8

2.2

mΩ

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 100 °C;

Fig. 12; Fig. 13

-

3

3.5

mΩ

Dynamic characteristics

QGD

gate-drain charge

-

32

45

nC

QG(tot)

total gate charge

VGS = 10 V; ID = 75 A; VDS = 30 V;

Fig. 14; Fig. 15

-

137

192

nC

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PSMN2R0-60PS Datasheet(PDF) 1 Page - NXP Semiconductors

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