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PSMN2R8-40PS Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN2R8-40PS Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page NXP Semiconductors PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET PSMN2R8-40PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 11 February 2013 4 / 13 003aad385 10-1 1 10 102 103 10-1 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms 1 ms 100 µs Limit RDSon = VDS / ID (1) tp = 10 µs Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.4 0.7 K/W 003aad247 10-4 10-3 10-2 10-1 1 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Zth (j-mb) (K/W) single shot 0.02 0.05 0.1 0.2 δ = 0.5 tp T P t tp T δ = Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration |
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