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PSMN3R4-30BLE Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN3R4-30BLE Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors PSMN3R4-30BLE N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK PSMN3R4-30BLE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 12 October 2012 7 / 13 003aaj365 0 20 40 60 80 100 0 0.5 1 1.5 2 VDS(V) ID (A) VGS(V) = 4.5 10 2.4 2.6 2.8 3 3.5 Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values 003aaj366 0 5 10 15 20 0 4 8 12 16 VGS(V) RDSon (mΩ) Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aaj367 0 30 60 90 120 0 20 40 60 80 100 ID(A) gfs (S) Fig. 8. Forward transconductance as a function of drain current; typical values 003aaj368 0 20 40 60 80 100 120 0 1 2 3 4 VGS(V) ID (A) Tj = 25 °C Tj = 175 °C Fig. 9. Transfer characteristics; drain current as a function of gate-source voltage; typical values |
Similar Part No. - PSMN3R4-30BLE_15 |
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Similar Description - PSMN3R4-30BLE_15 |
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