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PSMN3R9-25MLC Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN3R9-25MLC Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page PSMN3R9-25MLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 — 15 June 2012 4 of 14 NXP Semiconductors PSMN3R9-25MLC N-channel 25 V 4.15 m Ω logic level MOSFET in LFPAK33 using NextPower Technology 5. Thermal characteristics Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aaj779 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 V DS(V) I D (A) Limit RDSon = VDS / ID DC 100 μs 10 ms tp =10 μs 100 ms 1 ms Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 1.95 2.18 K/W Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 003aaj780 single shot 0.2 0.1 0.05 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) Z th(j-mb) (K/W) δ= 0.5 0.02 tp T P t tp T δ = 10 -6 |
Similar Part No. - PSMN3R9-25MLC_15 |
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Similar Description - PSMN3R9-25MLC_15 |
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