PSMN7R0-30MLC

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Product data sheet

Rev. 4 — 15 June 2012

6 of 14

NXP Semiconductors

PSMN7R0-30MLC

N-channel 30 V 7 m

Ω logic level MOSFET in LFPAK33 using NextPower Technology

turn-on delay time

-9.7

-ns

rise time

-

15.4

-

ns

turn-off delay time

-

13.4

-

ns

fall time

-

8.5

-

ns

output charge

-

24.7

-

nC

Source-drain diode

source-drain voltage

see Figure 15

-

0.85

1.1

V

reverse recovery time

-

18.3

-

ns

recovered charge

-

11.9

-

nC

reverse recovery rise

time

-

11.4

-

ns

reverse recovery fall

time

-6.9

-ns

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 6.

Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aaj537

0

15

30

45

60

75

012

34

V

I

D

(A)

V

2.8

3.5

4.5

10

3

003aaj538

0

5

10

15

20

0

4

8

12

16

V

R

DSon

(m

Ω)