PSMN017-30BL

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Product data sheet

Rev. 2 — 3 April 2012

5 of 14

NXP Semiconductors

PSMN017-30BL

N-channel 30 V 17 m

Ω logic level MOSFET in D2PAK

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source breakdown

voltage

30

--V

27

-

-

V

gate-source threshold voltage

see Figure 10; see Figure 11

1.3

1.7

2.15

V

see Figure 11

0.5

--V

see Figure 11

--2.45

V

drain leakage current

-

0.3

1

µA

-

-

50

µA

gate leakage current

-

10

100

nA

-

10

100

nA

drain-source on-state

resistance

see Figure 12

--43

m

Ω

see Figure 13

-

18.6

23.3

m

Ω

see Figure 12

-

24

31.5

m

Ω

see Figure 12

-

-

23.5

m

Ω

see Figure 13

-

13.3

17

m

Ω

gate resistance

f = 1 MHz

-

2.03

-

Ω

Dynamic characteristics

total gate charge

see Figure 14; see Figure 15

-

10.7

-

nC

see Figure 14; see Figure 15

-9.55

-nC

see Figure 14; see Figure 15

-5.1

-nC

gate-source charge

-

1.52

-

nC

pre-threshold gate-source

charge

-1

-nC

post-threshold gate-source

charge

-0.5

-nC

gate-drain charge

-

1.94

-

nC

gate-source plateau voltage

see Figure 15

-2.86

-V

input capacitance

-

552

-

pF

output capacitance

-

127

-

pF

reverse transfer capacitance

-

64

-

pF