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BUK964R4-40B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK964R4-40B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK964R4-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 — 8 February 2011 6 of 14 NXP Semiconductors BUK964R4-40B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = -55 °C 36 - - V ID =0.25mA; VGS =0V; Tj = 25 °C 40 --V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 10 1.1 1.5 2 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --2.3 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10 0.5 --V IDSS drain leakage current VDS =40V; VGS =0V; Tj = 175 °C - - 500 µA VDS =40V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS =15V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-15 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A; Tj = 175 °C; see Figure 11; see Figure 12 --8.3 m Ω VGS =4.5 V; ID =25A; Tj = 25 °C --4.8 m Ω VGS =10V; ID =25A; Tj =25°C - 3.6 4 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 11; see Figure 12 -3.9 4.4 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =32V; VGS =5V; Tj =25°C; see Figure 13 -64 -nC QGS gate-source charge - 11 - nC QGD gate-drain charge - 24 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 5343 7124 pF Coss output capacitance - 943 1131 pF Crss reverse transfer capacitance - 408 558 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -44 -ns tr rise time - 118 - ns td(off) turn-off delay time - 197 - ns tf fall time - 132 - ns LD internal drain inductance from drain lead 6 mm from package to center of die; Tj =25°C -4.5 -nH from upper edge of drain mounting base to center of die; Tj =25°C -2.5 -nH LS internal source inductance from source lead to source bond pad ; Tj =25°C -7.5 -nH |
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