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SQD10N30-330H Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQD10N30-330H Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQD10N30-330H www.vishay.com Vishay Siliconix S15-1136-Rev. C, 12-May-15 1 Document Number: 67070 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 300 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. 1.5 k Ω resistance in series with the gate. PRODUCT SUMMARY VDS (V) 300 RDS(on) ( Ω) at VGS = 10 V 0.330 ID (A) 10 Configuration Single D G S N-Channel MOSFET TO-252 Top View TO G D S Drain connected to tab ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD10N30-330H-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 300 V Gate-Source Voltage VGS ± 30 Continuous Drain Current TC = 25 °C ID 10 A TC = 125 °C 5 Continuous Source Current (Diode Conduction) a IS 50 Pulsed Drain Current b IDM 16 Single Pulse Avalanche Current e L = 0.05 mH IAS 12.65 Single Pulse Avalanche Energy e EAS 4mJ Maximum Power Dissipation b TC = 25 °C PD 107 W TC = 125 °C 35 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.4 |
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