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BUK9628-100A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9628-100A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BUK9628-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 26 April 2011 6 of 13 NXP Semiconductors BUK9628-100A N-channel TrenchMOS logic level FET Tj = 25 °C Tj = 25 °C Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 8. Drain-source on-state resistance as a function of drain current; typical values Tj = 25 °C; ID = 25 A VDS > ID x RDSon Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 20 40 60 ID (A) 0 VDS (V) 010 8 46 2 003aaf224 VGS (V) = 10.0 2.2 2.4 2.6 2.8 3.0 3.2 3.6 5.0 4.0 3.8 3.4 003aaf225 ID (A) 565 45 25 25 55 45 35 65 RDS(on) (m Ω) 5.0 3.4 3.6 3.8 4.0 3.2 3.0 19 21 17 23 RDS(on) (mΩ) 15 VGS (V) 311 9 57 003aaf226 0 20 15 10 5 25 ID (A) VGS (V) 06 4 2 003aaf227 Tj = 25 °C Tj = 175 °C |
Similar Part No. - BUK9628-100A_15 |
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Similar Description - BUK9628-100A_15 |
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