BUK9628-100A_15 datasheet(2/13 Pages) PHILIPS

Part #	BUK9628-100A

Description	N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BUK9628-100A

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Product data sheet

Rev. 02 — 26 April 2011

2 of 13

NXP Semiconductors

BUK9628-100A

N-channel TrenchMOS logic level FET

2.

Pinning information

3.

Ordering information

4.

Limiting values

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT404 (D2PAK)

2

D

drain

3S

source

mb

D

mounting base; connected to drain

mb

13

2

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9628-100A

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads

(one lead cropped)

SOT404

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

VDGR

drain-gate voltage

RGS =20kΩ

-

100

V

VGS

gate-source voltage

-10

10

V

ID

drain current

Tmb =25°C

-

49

A

Tmb = 100 °C

-

34

A

IDM

peak drain current

Tmb = 25 °C; pulsed

-

195

A

Ptot

total power dissipation

Tmb = 25 °C

-

166

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

VGSM

peak gate-source voltage

pulsed; tp ≤ 50 µs

-15

15

V

Source-drain diode

IS

source current

Tmb =25°C

-

49

A

ISM

peak source current

pulsed; Tmb = 25 °C

-

195

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source avalanche

energy

ID =30A; Vsup ≤ 25 V; RGS =50 Ω;

VGS =5 V; Tj(init) = 25 °C; unclamped

-45

mJ

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