BUK626R2-40C

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Product data sheet

Rev. 1 — 12 July 2011

6 of 14

NXP Semiconductors

BUK626R2-40C

N-channel TrenchMOS intermediate level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

40

--V

36

--V

gate-source threshold voltage

see Figure 9; see Figure 10

1.8

2.3

2.8

V

see Figure 9

--3.3

V

see Figure 9

0.8

--V

drain leakage current

-

-

500

µA

-

0.02

1

µA

gate leakage current

-

2

100

nA

-

2

100

nA

see Figure 11

-5.2

6.2

m

Ω

see Figure 11

-7

8.8

m

Ω

see Figure 11

-

8

10.7

m

Ω

see Figure 12; see Figure 11

--13

m

Ω

Dynamic characteristics

total gate charge

see Figure 13; see Figure 14

-67

-nC

see Figure 13; see Figure 14

-39

-nC

gate-source charge

see Figure 13; see Figure 14

-11

-nC

gate-drain charge

-

20

-

nC

input capacitance

-

2790

3720

pF

output capacitance

-

380

456

pF

reverse transfer capacitance

-

275

377

pF

turn-on delay time

-

16.7

-

ns

rise time

-

48.6

-

ns

turn-off delay time

-

124

-

ns

fall time

-

17

-

ns

internal drain inductance

from upper edge of drain mounting

-3.5

-nH

internal source inductance

from source lead to source bond

-7.5

-nH