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BUK626R2-40C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK626R2-40C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK626R2-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 12 July 2011 6 of 14 NXP Semiconductors BUK626R2-40C N-channel TrenchMOS intermediate level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0 V; Tj = 25 °C 40 --V ID = 250 µA; VGS =0 V; Tj = -55 °C 36 --V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 9; see Figure 10 1.8 2.3 2.8 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 9 --3.3 V ID =1mA; VDS =VGS; Tj =175 °C; see Figure 9 0.8 --V IDSS drain leakage current VDS =40V; VGS =0V; Tj = 175 °C - - 500 µA VDS =40V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-20 V; VDS =0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =15A; Tj =25°C; see Figure 11 -5.2 6.2 m Ω VGS =5V; ID =15A; Tj =25°C; see Figure 11 -7 8.8 m Ω VGS = 4.5 V; ID =15A; Tj =25°C; see Figure 11 - 8 10.7 m Ω VGS =10V; ID =15A; Tj =175 °C; see Figure 12; see Figure 11 --13 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =32V; VGS =10V; see Figure 13; see Figure 14 -67 -nC ID =25A; VDS =32V; VGS =5V; see Figure 13; see Figure 14 -39 -nC QGS gate-source charge ID =25A; VDS =32V; VGS =10V; see Figure 13; see Figure 14 -11 -nC QGD gate-drain charge - 20 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj = 25 °C; see Figure 15 - 2790 3720 pF Coss output capacitance - 380 456 pF Crss reverse transfer capacitance - 275 377 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10 V; RG(ext) =10 Ω - 16.7 - ns tr rise time - 48.6 - ns td(off) turn-off delay time - 124 - ns tf fall time - 17 - ns LD internal drain inductance from upper edge of drain mounting base to centre of die ; Tj =25°C -3.5 -nH LS internal source inductance from source lead to source bond pad ; Tj =25°C -7.5 -nH |
Similar Part No. - BUK626R2-40C_15 |
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