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TLI4963-1M Datasheet(PDF) 11 Page - Infineon Technologies AG |
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TLI4963-1M Datasheet(HTML) 11 Page - Infineon Technologies AG |
11 / 17 page Technical Product Description 11 Rev. 1.0, 2015-07-21 TLI4963-1M Specification 3.2 Absolute Maximum Ratings Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example): e.g. for: VDD = 5 V, IS = 2 mA, VQSAT = 0.5 V, IQ = 1 mA Power dissipation: PDIS = 5 V x 2 mA + 0.5 V x 1 mA = 10 mW + 0.5 mW = 10.5 mW Temperature ΔT = RthJA x PDIS = 300 K/W x 10.5 mW = 3.15 K For TA = 150 °C: TJ = TA + ΔT = 150 °C + 3.15 K = 153.15 °C Table 3 Absolute Maximum Rating Parameters Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Supply voltage VDD -0.3 6 V Output voltage VQ -0.5 6 V Ambient temperature TA -40 150 °C for 2000h (not additive) Thermal resistance Junction ambient RthJA 300 K/W for PG-SOT23-3-15 (2s2p) Thermal resistance Junction lead RthJL 100 K/W for PG-SOT23-3-15 Table 4 ESD Protection1) (TA = 25°C) 1) Characterization of ESD is carried out on a sample basis, not subject to production test. Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. ESD voltage (HBM)2) 2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001. VESD -4 4 kV R = 1.5 kΩ, C = 100 pF ESD voltage (CDM) VESD -1 1 kV |
Similar Part No. - TLI4963-1M_15 |
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Similar Description - TLI4963-1M_15 |
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