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TLI4963-1M Datasheet(PDF) 11 Page - Infineon Technologies AG

Part # TLI4963-1M
Description  High Precision Automotive Hall Effect Latch
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLI4963-1M Datasheet(HTML) 11 Page - Infineon Technologies AG

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Technical Product Description
11
Rev. 1.0, 2015-07-21
TLI4963-1M
Specification
3.2
Absolute Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):
e.g. for: VDD = 5 V, IS = 2 mA, VQSAT = 0.5 V, IQ = 1 mA
Power dissipation: PDIS = 5 V x 2 mA + 0.5 V x 1 mA = 10 mW + 0.5 mW = 10.5 mW
Temperature ΔT = RthJA x PDIS = 300 K/W x 10.5 mW = 3.15 K
For TA = 150 °C: TJ = TA + ΔT = 150 °C + 3.15 K = 153.15 °C
Table 3
Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
Supply voltage
VDD
-0.3
6
V
Output voltage
VQ
-0.5
6
V
Ambient temperature TA
-40
150
°C
for 2000h (not additive)
Thermal resistance
Junction ambient
RthJA
300
K/W
for PG-SOT23-3-15 (2s2p)
Thermal resistance
Junction lead
RthJL
100
K/W
for PG-SOT23-3-15
Table 4
ESD Protection1) (TA = 25°C)
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
ESD voltage (HBM)2)
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
VESD
-4
4
kV
R = 1.5 kΩ, C = 100 pF
ESD voltage (CDM)
VESD
-1
1
kV


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