Electronic Components Datasheet Search |
|
MX28F2000TPC-90C4 Datasheet(PDF) 1 Page - Macronix International |
|
MX28F2000TPC-90C4 Datasheet(HTML) 1 Page - Macronix International |
1 / 31 page FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical (including preprogramming time) – Block Erase • Optimized high density blocked architecture – Eight 4-KB blocks – Fourteen 16-KB blocks 1 P/N: PM0472 • Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit • 10,000 minimum erase/program cycles • Latch-up protected to 100mA from -1 to VCC+1V • Advanced CMOS Flash memory technology • Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts • Package type: – 32-pin plastic DIP – 32-pin PLCC REV. 1.0, Jun 13, 1997 GENERAL DESCRIPTION The MX28F2000T is a 2-mega bit Flash memory or- ganized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased in- system or in-standard EPROM programmers. The standard MX28F2000T offers access times as fast as 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000T has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM function- ality with in-circuit electrical erasure and programming. The MX28F2000T uses a command register to manage this functionality, while maintaining a standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory con- tents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F2000T uses a 12.0V ± 5% VPP supply to perform the Auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY |
Similar Part No. - MX28F2000TPC-90C4 |
|
Similar Description - MX28F2000TPC-90C4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |