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MX29F016TI-12 Datasheet(PDF) 8 Page - Macronix International

Part # MX29F016TI-12
Description  16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
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Manufacturer  MCNIX [Macronix International]
Direct Link  http://www.macronix.com
Logo MCNIX - Macronix International

MX29F016TI-12 Datasheet(HTML) 8 Page - Macronix International

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P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence
into the command
register.
Microprocessor read cycles retrieve array
data. The device remains enabled for reads until the
command register contents are altered.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command
must then be written to place the device in the desired
state.
SILICON-ID-READ COMMAND
Flash memories are intended for use in applications
where the local CPU alters memory contents. As such,
manufacturer and device codes must be accessible
while the device resides in the target system. PROM
programmers typically access signature codes by raising
A9 to a high voltage. However, multiplexing high voltage
onto address lines is not generally desired system
design practice.
The MX29F016 contains a Silicon-ID-Read operation to
supplement
traditional
PROM
programming
methodology. The operation is initiated by writing the
read silicon ID command sequence into the command
register. Following the command write, a read cycle with
A1=VIL,A0=VIL retrieves the manufacturer code of C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of ADH for MX29F016.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H.
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the
Automatic Chip Erase. Upon executing the Automatic
Chip Erase, the device will automatically program and
verify the entire memory for an all-zero data pattern.
When the device is automatically verified to contain an
all-zero pattern, a self-timed chip erase and verify begin.
The erase and verify operations are completed when the
data on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to provide any
control or timing during these operations.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).
If the Erase operation was unsuccessful, the data on Q5
is "1"(see Table 4), indicating the erase operation exceed
internal timing limit.
The automatic erase begins on the rising edge of the last
WE pulse in the command sequence and terminates
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode.
Pins
A0
A1
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Code(Hex)
Manufacture code
VIL
VIL
1
1
0
0001
0C2H
Device code for MX29F016
VIH
VIL
1
0
1
0110
1ADH
TABLE 3. SILICON ID CODE


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