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NX3008PBKW Datasheet(PDF) 1 Page - NXP Semiconductors |
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NX3008PBKW Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 16 page 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C ---30 V VGS gate-source voltage -8 - 8 V ID drain current VGS =-4.5V; Tamb =25°C [1] ---200 mA Static characteristics RDSon drain-source on-state resistance VGS =-4.5V; ID =-200mA; Tj =25 °C -2.8 4.1 Ω |
Similar Part No. - NX3008PBKW_15 |
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Similar Description - NX3008PBKW_15 |
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