NX3008PBKW_15 datasheet(1/16 Pages) PHILIPS

Part #	NX3008PBKW

Description	30 V, 200 mA P-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

NX3008PBKW

30 V, 200 mA P-channel Trench MOSFET

Rev. 1 — 1 August 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

---30

V

VGS

gate-source voltage

-8

-

8

V

ID

drain current

VGS =-4.5V; Tamb =25°C

[1] ---200 mA

Static characteristics

RDSon

drain-source on-state

resistance

VGS =-4.5V; ID =-200mA;

Tj =25 °C

-2.8

4.1

Ω

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