NX7002AKS_15 datasheet(6/15 Pages) PHILIPS

Part #	NX7002AKS

Description	60 V, dual N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NX7002AKS

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Product data sheet

Rev. 1 — 1 March 2012

6 of 15

NXP Semiconductors

NX7002AKS

60 V, dual N-channel Trench MOSFET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =250 µA; VGS =0V; Tj = 25 °C

60

--V

VGSth

gate-source threshold

voltage

ID =250 µA; VDS =VGS; Tj = 25 °C

1.1

1.6

2.1

V

IDSS

drain leakage current

VDS =60V; VGS =0V; Tj = 25 °C

--1

µA

VDS =60V; VGS =0V; Tj = 150 °C

--10

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

--2

µA

VGS =-20 V; VDS =0V; Tj = 25 °C

--2

µA

VGS =10V; VDS =0V; Tj = 25 °C

--0.5

µA

VGS =-10 V; VDS =0V; Tj = 25 °C

--0.5

µA

VGS =5V; VDS =0V; Tj = 25 °C

-

100

nA

VGS =-5 V; VDS =0V; Tj = 25 °C

-

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =100 mA; Tj =25°C

-

3

4.5

Ω

VGS =10V; ID =100 mA; Tj = 150 °C

-

6.2

9.2

Ω

VGS =5V; ID = 100 mA; Tj =25 °C

-

3.7

5.2

Ω

gfs

forward

transconductance

VDS =10V; ID = 200 mA; Tj = 25 °C

-

230

-

mS

Dynamic characteristics

QG(tot)

total gate charge

VDS =30V; ID = 200 mA; VGS =4.5 V;

Tj =25°C

-

0.33

0.43

nC

QGS

gate-source charge

-

0.12

-

nC

QGD

gate-drain charge

-

0.09

-

nC

Ciss

input capacitance

VDS =10V; f=1MHz; VGS =0V;

Tj =25°C

-11

17

pF

Coss

output capacitance

-

3.4

-

pF

Crss

reverse transfer

capacitance

-1.4

-pF

td(on)

turn-on delay time

VDS =40V; RL = 250 Ω; VGS =10V;

RG(ext) =6 Ω; Tj =25 °C

-

6

12

ns

tr

rise time

-

7

-

ns

td(off)

turn-off delay time

-

20

40

ns

tf

fall time

-

14

-

ns

Source-drain diode

VSD

source-drain voltage

IS =115 mA; VGS =0V; Tj = 25 °C

0.47

0.7

1.2

V

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