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PESD5V0X1UAB Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD5V0X1UAB Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page PESD5V0X1UAB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 15 February 2011 3 of 11 NXP Semiconductors PESD5V0X1UAB Ultra low capacitance unidirectional ESD protection diode [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2. Table 6. ESD maximum ratings Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] -15 kV machine model - 2000 V MIL-STD-883 (human body model) [2] -10 kV Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( μs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 μs 50 % IPP; 20 μs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
Similar Part No. - PESD5V0X1UAB_15 |
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Similar Description - PESD5V0X1UAB_15 |
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