MX29LV800BTI-70 datasheet(11/60 Pages) MCNIX

Part #	MX29LV800BTI-70

Description	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Download	60 Pages

Scroll/Zoom	100%

Manufacturer	MCNIX [Macronix International]

Direct Link	http://www.macronix.com

Logo

11 / 60 page

11

P/N:PM0709

MX29LV800T/B

REV. 1.3, JAN. 24, 2002

READ/RESET COMMAND

The read or reset operation is initiated by writing the

read/reset command sequence into the command reg-

ister. Microprocessor read cycles retrieve array data.

The device remains enabled for reads until the command

register contents are altered.

If program-fail or erase-fail happen, the write of F0H will

reset the device to abort the operation. A valid com-

mand must then be written to place the device in the

desired state.

SILICON-ID READ COMMAND

Flash memories are intended for use in applications where

the local CPU alters memory contents. As such, manu-

facturer and device codes must be accessible while the

device resides in the target system. PROM program-

mers typically access signature codes by raising A9 to

a high voltage(VID). However, multiplexing high voltage

onto address lines is not generally desired system de-

sign practice.

The MX29LV800T/B contains a Silicon-ID-Read opera-

tion to supple traditional PROM programming methodol-

ogy. The operation is initiated by writing the read silicon

ID command sequence into the command register. Fol-

lowing the command write, a read cycle with A1=VIL,

A0=VIL retrieves the manufacturer code of C2H/00C2H.

A read cycle with A1=VIL, A0=VIH returns the device

code of DAH/22DAH for MX29LV800T, 5BH/225BH for

MX29LV800B.

SET-UP AUTOMATIC CHIP/SECTOR ERASE

COMMANDS

Chip erase is a six-bus cycle operation. There are two

"unlock" write cycles. These are followed by writing the

"set-up" command 80H. Two more "unlock" write cy-

cles are then followed by the chip erase command 10H

or sector erase command 30H.

The Automatic Chip Erase does not require the device

to be entirely pre-programmed prior to executing the Au-

tomatic Chip Erase. Upon executing the Automatic Chip

Erase, the device will automatically program and verify

the entire memory for an all-zero data pattern. When the

device is automatically verified to contain an all-zero

pattern, a self-timed chip erase and verify begin. The

erase and verify operations are completed when the data

on Q7 is "1" at which time the device returns to the

Read mode. The system is not required to provide any

control or timing during these operations.

When using the Automatic Chip Erase algorithm, note

that the erase automatically terminates when adequate

erase margin has been achieved for the memory array(no

erase verification command is required).

If the Erase operation was unsuccessful, the data on

Q5 is "1"(see Table 7), indicating the erase operation

exceed internal timing limit.

The automatic erase begins on the rising edge of the

last WE or CE pulse, whichever happens first in the

command sequence and terminates when the data on

Q7 is "1" at which time the device returns to the Read

mode, or the data on Q6 stops toggling for two consecu-

tive read cycles at which time the device returns to the

Read mode.

the Flash memory.

If RESET is asserted during a program or erase

operation, the RY/BY pin remains a "0" (busy) until the

internal reset operation is complete, which requires a

time of tREADY (during Embedded Algorithms). The

sysytem can thus monitor RY/BY to determine whether

the reset operation is complete. If RESET is asserted

when a program or erase operation is commpleted within

a time of tREADY (not during Embedded Algorithms).

The system can read data tRH after the RESET pin

returns to VIH.

Refer to the AC Characteristics tables for RESET

parameters and to Figure 22 for the timing diagram.

Similar Part No. - MX29LV800BTI-70

Manufacturer	Part #	Datasheet	Description
Macronix International	MX29LV800BT	749Kb / 63P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29LV800BTMC-70	749Kb / 63P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29LV800BTMC-90	749Kb / 63P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29LV800BTMI-70	749Kb / 63P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29LV800BTMI-90	749Kb / 63P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

More results

Similar Description - MX29LV800BTI-70

Manufacturer	Part #	Datasheet	Description
Macronix International	MX29LV800CT	783Kb / 69P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29LV800BT	749Kb / 63P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29SL800CT	734Kb / 64P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
	MX26LV800AT	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV800T	553Kb / 48P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX28F640C3BT	295Kb / 41P	64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX28F640C3T	638Kb / 44P	64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX28F160C3T	417Kb / 44P	16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29F800T	693Kb / 42P	8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
	MX29LV008T	471Kb / 52P	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

More results

MX29LV800BTI-70 Datasheet(PDF) 11 Page - Macronix International

MX29LV800BTI-70 Datasheet(HTML) 11 Page - Macronix International

Similar Part No. - MX29LV800BTI-70

Similar Description - MX29LV800BTI-70

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Datasheet Download

Link URL