August 3,2015-REV.00

Page 2

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C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

-60

-

-

V

Gate Threshold Voltage

-1.0

-1.88

-2.5

V

Drain-Source On-State Resistance

-

140

190

m

Ω

-

190

240

Zero Gate Voltage Drain Current

-

-

-1

uA

Gate-Source Leakage Current

0V, V

-

-

+100

nA

Dynamic

(Note 7)

Total Gate Charge

(Note 1,2)

-

8.3

-

nC

Gate-Source Charge

-

1.8

-

Gate-Drain Charge

-

1.6

-

Input Capacitance

Ciss

f=1.0MHZ

-

430

-

pF

Output Capacitance

Coss

-

33

-

Reverse Transfer Capacitance

Crss

-

29

-

Turn-On Delay Time

(Note 1,2)

-

5.1

-

ns

Turn-On Rise Time

tr

-

20

-

Turn-Off Delay Time

-

36

-

Turn-Off Fall Time

tf

-

11

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

-1.5

A

Diode Forward Voltage

-

-0.78

-1.0

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

The maximum current rating is package limited.

4.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency

and duty cycles to keep initial TJ =25°C.

5.

6.

defined as the solder mounting surface of the drain pins. Mounted on a 1 inch

7.

Guaranteed by design, not subject to production testing.