Features

• High Surge Capability

TO-244AB Package

• Not ESD Sensitive

Parameter

Symbol

MBRF20045(R) MBRF20060(R)

Unit

Repetitive peak reverse

voltage

45

60

V

RMS reverse voltage

32

42

V

Silicon Power

Schottky Diode

MBRF20045 thru MBRF200100R

MBRF200100(R)

80

57

MBRF20080(R)

Conditions

100

70

DC blocking voltage

45

60

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRF20045(R) MBRF20060(R)

Unit

Average forward current

(per pkg)

200

200

A

Maximum forward voltage

(per leg)

0.70

0.75

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.45

0.45

°C/W

A

10

10

Reverse current at rated DC

blocking voltage (per leg)

Peak forward surge current

(per leg)

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

mA

V

Conditions

-55 to 150

MBRF20080(R)

0.45

0.45

0.84

0.84

30

30

200

200

1500

1500

1500

1500

-55 to 150

-55 to 150

100

80

-55 to 150

MBRF200100(R)

11

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