Features

• High Surge Capability

TO-244AB Package

• Not ESD Sensitive

Parameter

Symbol

MBRF50045(R) MBRF50060(R)

Unit

Repetitive peak reverse

voltage

45

60

V

RMS reverse voltage

32

42

V

MBRF50045 thru MBRF500100R

MBRF500100(R)

80

57

MBRF50080(R)

Silicon Power

Schottky Diode

Conditions

100

70

DC blocking voltage

45

60

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRF50045(R) MBRF50060(R)

Unit

Average forward current

(per pkg)

500

500

A

Maximum forward voltage

(per leg)

0.75

0.78

11

10

10

50

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.30

0.30

°C/W

Peak forward surge current

(per leg)

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated DC

blocking voltage (per leg)

MBRF50080(R)

0.30

0.30

0.84

0.84

50

50

500

500

3500

3500

-55 to 150

-55 to 150

100

80

-55 to 150

MBRF500100(R)

11

3500

3500

A

10

10

mA

V

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