Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT30020(R) MBRT30030(R)

Unit

Repetitive peak reverse voltage

20

30

V

RMS reverse voltage

14

21

V

DC blocking voltage

20

30

V

Conditions

40

28

40

35

MBRT30020 thru MBRT30040R

MBRT30040(R)

35

25

MBRT30035(R)

Silicon Power

Schottky Diode

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRT30020(R) MBRT30030(R)

Unit

Average forward current (per

pkg)

300

300

A

Maximum instantaneous

forward voltage (per leg)

0.70

0.70

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.40

0.40

°C/W

300

300

Peak forward surge current

(per leg)

2000

2000

2000

2000

V

-55 to 150

-55 to 150

40

35

A

0.40

0.70

0.70

30

10

10

Conditions

-55 to 150

-55 to 150

MBRT30040(R)

11

MBRT30035(R)

mA

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

30

0.40

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1