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2SB1202G-X-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB1202G-X-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SB1202 PNP PLANAR TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R217-005.E ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V TO-126C 20 W TO-251 28 W Collector Power Dissipation Tc=25 °C TO-252 PD 28 W DC IC -3 A Collector Current PULSE ICP -6 A Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-126C 6.25 TO-251 4.53 Junction to Case TO-252 θJC 4.53 °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT C-B Breakdown Voltage BVCBO IC=-10μA, IE=0 -60 V C-E Breakdown Voltage BVCEO IC=-1mA, RBE=∞ -50 V E-B Breakdown Voltage BVEBO IE=-10μA, IC=0 -6 V Collector Cutoff Current ICBO VCB=-40V,IE=0 -1 μA Emitter Cutoff Current IEBO VEB=-4V,IC=0 -1 μA C-E Saturation Voltage VCE(SAT) IC=-2A, IB=-100mA -0.35 -0.7 V B-E Saturation Voltage VBE(SAT) IC=-2A, IB=-100mA -0.94 -1.2 V hFE1 VCE=-2V, Ic=-100mA 100 560 DC Current Gain hFE2 VCE=-2V, Ic=-3A 35 Gain-Bandwidth Product fT VCE=-10V, IC=-50mA 150 MHz Output Capacitance Cob VCB=-10V, f=1MHz 39 pF Turn-on Time tON See test circuit 70 ns Storage Time tSTG See test circuit 450 ns Fall Time tF See test circuit 35 ns CLASSIFICATION OF hFE1 RANK R S T U RANGE 100-200 140-280 200-400 280-560 |
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