2SC5200

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R214-005, B

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PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

230

V

Collector-Emitter Voltage

230

V

Emitter-Base Voltage

5

V

Collector Current

15

A

Base Current

1.5

A

150

W

Junction Temperature

150

°C

Storage Temperature Range

-55 ~ 150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Breakdown Voltage

230

V

Collector-Emitter Saturation Voltage

0.4

3.0

V

Base -Emitter Voltage

1.0

1.5

V

Collector Cut-off Current

5.0

μA

Emitter Cut-off Current

5.0

μA

DC Current Gain

55

160

35

60

Transition Frequency

30

MHz

Collector Output Capacitance

200

pF



RANK

R

O

Range

55 ~ 110

80 ~ 160