2SC5765

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R216-002.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

15

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

7

V

Collector Current

DC

5

A

PLUSED

9

A

Collector Power Dissipation (Note 2)

550

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

10

V

Collector Cut-Off Current

0.1

μA

Emitter Cut-Off Current

0.1

μA

DC Current Gain (Note)

450

700

320

170

Collector-Emitter Saturation Voltage (Note)

0.27

V

Collector Output Capacitance

25

pF

Note: Pulse test