9013

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R201-030.C



TYPICAL CHARACTERICS

0

10

0

20

8

4

18

16

14

12

10

6

2

20

30

40

50

Static Characteristic

1

10

1

1000

5

500

300

3

10000

Dc Current Gain

3000

1000

300

100

50

30

5

3

100

50

30

10

1

10

10000

50

3000

10000

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

3000

1000

300

100

30

3

1000

500

300

100

30

10

1

10

1000

5

300

10000

3000

1000

300

100

30

3

100

50

30

10

3

500

1

Current Gain-Bandwidth Product

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.