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PSMN3R3-80PS Datasheet(PDF) 1 Page - NXP Semiconductors |
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PSMN3R3-80PS Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.3 Applications DC-to-DC converters Load switch Motor control Server power supplies 1.4 Quick reference data [1] Continuous current is limited by package. [2] Measured 3 mm from package. PSMN3R3-80PS N-channel 80 V, 3.3 m Ω standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V ID drain current Tmb =25°C; VGS = 10 V; see Figure 1 [1] - - 120 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 338 W Tj junction temperature -55 - 175 °C Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =25 A; Tj =100 °C; see Figure 12 -4.6 5.4 m Ω VGS =10V; ID =25 A; Tj =25 °C; see Figure 13 [2] -2.8 3.3 m Ω Dynamic characteristics QGD gate-drain charge VGS =10V; ID =75 A; VDS =40V; see Figure 14; see Figure 15 -27 -nC QG(tot) total gate charge - 139 - nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS =10V; Tj(init) =25°C; ID = 120 A; Vsup ≤ 80 V; RGS =50 Ω; unclamped - - 676 mJ |
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