PSMN3R3-80PS_15 datasheet(1/15 Pages) PHILIPS

Part #	PSMN3R3-80PS

Description	N-channel 80 V, 3.3 m standard level MOSFET in TO-220

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Manufacturer	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

1.3 Applications

 DC-to-DC converters

 Load switch

 Motor control

 Server power supplies

1.4 Quick reference data

[1]

Continuous current is limited by package.

[2]

Measured 3 mm from package.

PSMN3R3-80PS

N-channel 80 V, 3.3 m

Ω standard level MOSFET in TO-220

Rev. 1 — 27 October 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

80

V

ID

drain current

Tmb =25°C; VGS = 10 V; see Figure 1

[1]

-

120

A

Ptot

total power dissipation

Tmb = 25 °C; see Figure 2

-

338

W

Tj

junction temperature

-55

-

175

°C

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10V; ID =25 A; Tj =100 °C;

see Figure 12

-4.6

5.4

m

Ω

VGS =10V; ID =25 A; Tj =25 °C;

see Figure 13

[2]

-2.8

3.3

m

Ω

Dynamic characteristics

QGD

gate-drain charge

VGS =10V; ID =75 A; VDS =40V;

see Figure 14; see Figure 15

-27

-nC

QG(tot)

total gate charge

-

139

-

nC

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS =10V; Tj(init) =25°C; ID = 120 A;

Vsup ≤ 80 V; RGS =50 Ω; unclamped

-

676

mJ

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PSMN3R3-80PS Datasheet(PDF) 1 Page - NXP Semiconductors

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