PSMN4R3-80PS

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Product data sheet

Rev. 03 — 18 April 2011

7 of 15

NXP Semiconductors

PSMN4R3-80PS

N-channel 80 V, 4.3 m

Ω standard level MOSFET in TO220

[1]

Measured 3 mm from package.

Source-drain diode

source-drain voltage

see Figure 17

--1.2

V

reverse recovery time

-59

-

ns

recovered charge

-

109

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Output characteristics: drain current as a

function of drain-source voltage; typical values

003aaf619

0

50

100

150

200

250

0

1530

4560

75

I

g

fs

(S)

003aaf620

0

20

40

60

80

0246

V

I

D

(A)

T

T

003aaf621

0

5

10

15

20

25

0

5

10

15

20

V

R

DSon

(m

Ω)

003aaf622

0

20

40

60

80

100

0

0.5

1

1.5

V

I

D

(A)

4.4

4.2

4.0

8.0

5.5

6.0

20.0

V