SQM120P04-04L_15 datasheet(1/10 Pages) VISHAY

Part #	SQM120P04-04L

Description	Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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SQM120P04-04L

www.vishay.com

Vishay Siliconix

S11-2036-Rev. B, 17-Oct-11

1

Document Number: 67047

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

- 40

RDS(on) () at VGS = - 10 V

0.0040

RDS(on) () at VGS = - 4.5 V

0.0060

ID (A)

- 120

Configuration

Single

S

G

D

P-Channel MOSFET

TO-263

S

D

G

Top View

ORDERING INFORMATION

Package

TO-263

Lead (Pb)-free and Halogen-free

SQM120P04-04L-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TC = 25 °C

ID

- 120

A

TC = 125 °C

- 120

Continuous Source Current (Diode Conduction)a

IS

- 120

Pulsed Drain Currentb

IDM

- 330

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 80

Single Pulse Avalanche Energy

EAS

320

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

375

W

TC = 125 °C

125

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

40

°C/W

Junction-to-Case (Drain)

RthJC

0.40

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