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PSMN013-30YLC Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN013-30YLC Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page PSMN013-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 24 October 2011 7 of 15 NXP Semiconductors PSMN013-30YLC N-channel 30 V 13.6 m Ω logic level MOSFET in LFPAK using NextPower technology Qoss output charge VGS =0V; VDS =15V; f=1MHz; Tj =25°C -3.3 -nC Source-drain diode VSD source-drain voltage IS =10A; VGS =0V; Tj =25°C; see Figure 17 - 0.86 1.1 V trr reverse recovery time IS =10A; dIS/dt = -100 A/µs; VGS =0V; VDS =15V -16 -ns Qr recovered charge - 6 - nC ta reverse recovery rise time VGS =0V; IS =10A; dIS/dt = -100 A/µs; VDS =15V; see Figure 18 -9.5 -ns tb reverse recovery fall time - 6.5 - ns Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Fig 6. Output characteristics; drain current as a function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aag249 0 10 20 30 40 012 34 V DS(V) I D (A) V GS(V) = 3.0 2.6 2.8 3.5 4.5 10 2.4 2.2 003aag250 0 10 20 30 40 04 8 12 16 20 V GS(V) R DSon (m Ω) |
Similar Part No. - PSMN013-30YLC_15 |
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Similar Description - PSMN013-30YLC_15 |
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