PJT7812 datasheet(1/6 Pages) PANJIT

Part #	PJT7812

Description	30V N-Channel Enhancement Mode MOSFET ??ESD Protected

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Manufacturer	PANJIT [Pan Jit International Inc.]

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PPJT7812

September 16,2015-REV.00

Page 1

30V N-Channel Enhancement Mode MOSFET

– ESD Protected

Voltage

30 V

Current

500mA

SOT-363

Unit: inch(mm)

Features



RDS(ON) , VGS@4.5V, ID@500mA<1.2

Ω



RDS(ON) , VGS@2.5V, ID@200mA<1.6

Ω



RDS(ON) , VGS@1.8V, ID@100mA<2.3

Ω



RDS(ON) , VGS@1.5V, ID@10mA<2.3

Ω(typ.)



Specially Designed for Switch Load, PWM Application, etc.



ESD Protected 2KV HBM



Lead free in compliance with EU RoHS 2011/65/EU directive



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-363 Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0002 ounces, 0.006 grams



Marking: T12

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+10

V

Continuous Drain Current

ID

500

mA

Pulsed Drain Current

(Note 4)

IDM

1500

mA

Power Dissipation

Ta=25

oC

PD

350

mW

Derate above 25

oC

2.8

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

357

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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