Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

MIC4423BWM Datasheet(PDF) 9 Page - Micrel Semiconductor

Part # MIC4423BWM
Description  Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICREL [Micrel Semiconductor]
Direct Link  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC4423BWM Datasheet(HTML) 9 Page - Micrel Semiconductor

Back Button MIC4423BWM Datasheet HTML 4Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 5Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 6Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 7Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 8Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 9Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 10Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 11Page - Micrel Semiconductor MIC4423BWM Datasheet HTML 12Page - Micrel Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 9 / 12 page
background image
January 1999
9
MIC4423/4424/4425
MIC4423/4424/4425
Micrel
in estimating power dissipation in the driver. Operating
frequency, power supply voltage, and load all affect power
dissipation.
Given the power dissipation in the device, and the thermal
resistance of the package, junction operating temperature for
any ambient is easy to calculate. For example, the thermal
resistance of the 8-pin plastic DIP package, from the datasheet,
is 150
°C/W. In a 25°C ambient, then, using a maximum
junction temperature of 150
°C, this package will dissipate
960mW.
Accurate power dissipation numbers can be obtained by
summing the three sources of power dissipation in the device:
• Load power dissipation (PL)
• Quiescent power dissipation (PQ)
• Transition power dissipation (PT)
Calculation of load power dissipation differs depending on
whether the load is capacitive, resistive or inductive.
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be calculated as:
PL = I2 RO D
where:
I = the current drawn by the load
RO = the output resistance of the driver when the
output is high, at the power supply voltage used
(See characteristic curves)
D = fraction of time the load is conducting (duty cycle)
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the driver.
The energy stored in a capacitor is described by the equation:
E = 1/2 C V2
As this energy is lost in the driver each time the load is charged
or discharged, for power dissipation calculations the 1/2 is
removed. This equation also shows that it is good practice not
to place more voltage in the capacitor than is necessary, as
dissipation increases as the square of the voltage applied to
the capacitor. For a driver with a capacitive load:
PL = f C (VS)2
where:
f = Operating Frequency
C = Load Capacitance
VS = Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For the
part of the cycle in which the driver is actively forcing current
into the inductor, the situation is the same as it is in the
resistive case:
PL1 = I2 RO D
However, in this instance the RO required may be either the
on resistance of the driver when its output is in the high state,
or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the inductor
is forcing current through the driver, dissipation is best
described as
PL2 = I VD (1 – D)
where VD is the forward drop of the clamp diode in the driver
(generally around 0.7V). The two parts of the load dissipation
must be summed in to produce PL
PL = PL1 + PL2
Quiescent Power Dissipation
Quiescent power dissipation (PQ, as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤0.2mA; a logic high will result in a current drain of ≤2.0mA.
Quiescent power can therefore be found from:
PQ = VS [D IH + (1 – D) IL]
where:
IH = quiescent current with input high
IL = quiescent current with input low
D =
fraction of time input is high (duty cycle)
VS = power supply voltage
Transition Power Dissipation
Transition power is dissipated in the driver each time its output
changes state, because during the transition, for a very brief
interval, both the N- and P-channel MOSFETs in the output
totem-pole are ON simultaneously, and a current is conducted
through them from VS to ground. The transition power
dissipation is approximately:
PT = f VS (A•s)
where (A•s) is a time-current factor derived from Figure 2.
Total power (PD) then, as previously described is just
PD = PL + PQ +PT
Examples show the relative magnitude for each term.
EXAMPLE 1: A MIC4423 operating on a 12V supply driving
two capacitive loads of 3000pF each, operating at 250kHz,
with a duty cycle of 50%, in a maximum ambient of 60
°C.
First calculate load power loss:
PL = f x C x (VS)2
PL = 250,000 x (3 x 10–9 + 3 x 10–9) x 122
= 0.2160W
Then transition power loss:
PT = f x VS x (A•s)
= 250,000 • 12 • 2.2 x 10–9 = 6.6mW
Then quiescent power loss:
PQ = VS x [D x IH + (1 – D) x IL]


Similar Part No. - MIC4423BWM

ManufacturerPart #DatasheetDescription
logo
Micrel Semiconductor
MIC4423BWM MICREL-MIC4423BWM Datasheet
218Kb / 13P
   Dual 3A-Peak Low-Side MOSFET Driver
logo
MIC GROUP RECTIFIERS
MIC4423BWM MIC-MIC4423BWM Datasheet
221Kb / 13P
   Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
More results

Similar Description - MIC4423BWM

ManufacturerPart #DatasheetDescription
logo
MIC GROUP RECTIFIERS
MIC4423 MIC-MIC4423_11 Datasheet
221Kb / 13P
   Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
MIC4123 MIC-MIC4123_11 Datasheet
364Kb / 11P
   Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
logo
Sensitron
SHD850003D SENSITRON-SHD850003D Datasheet
57Kb / 3P
   3A-Peak Low Side MOSFET Driver Bipolar/CMOS/DMOS Process
logo
MIC GROUP RECTIFIERS
MIC4420 MIC-MIC4420_11 Datasheet
231Kb / 12P
   6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
MIC4421 MIC-MIC4421_11 Datasheet
241Kb / 12P
   9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
logo
Micrel Semiconductor
MIC4421 MICREL-MIC4421 Datasheet
110Kb / 10P
   9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
MIC4120 MICREL-MIC4120_10 Datasheet
458Kb / 10P
   6A-Peak Low-Side Mosfet Driver Bipolar/CMOS/DMOS Process
MIC4451 MICREL-MIC4451 Datasheet
105Kb / 10P
   12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
logo
Sensitron
SHD850001 SENSITRON-SHD850001 Datasheet
43Kb / 3P
   6A-Peak Low Side MOSFET Driver Bipolar/CMOS/DMOS Process
logo
Micrel Semiconductor
MIC4421A MICREL-MIC4421A Datasheet
393Kb / 13P
   9A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com