HE8550L-X-T9N-K datasheet(2/4 Pages) UTC

Part #	HE8550L-X-T9N-K

Description	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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HE8550

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-031.H



ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-25

V

Emitter-Base Voltage

VEBO

-6

V

Collector Dissipation

SOT-23

PC

350

mW

SOT-89

0.5

W

TO-92/TO-92NL

1

W

Collector Current

IC

-1.5

A

Junction Temperature

TJ

+150

C

Storage Temperature

TSTG

-65 ~ +150

C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100μA, IE=0

-40

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=-2mA, IB=0

-25

V

Emitter-Base Breakdown Voltage

BVEBO

IE=-100μA, IC=0

-6

V

Collector Cut-Off Current

ICBO

VCB=-35V, IE=0

-100

nA

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-100

nA

DC Current Gain

hFE1

VCE=-1V, IC=-5mA

45

170

hFE2

VCE=-1V, IC=-100mA

85

160

500

hFE3

VCE=-1V, IC=-800mA

40

80

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-800mA, IB=-80mA

-0.28

-0.5

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-800mA, IB=-80mA

-0.98

-1.2

V

Base-Emitter Voltage

VBE

VCE=-1V,IC=-10mA

-0.66

-1.0

V

Current Gain Bandwidth Product

fT

VCE=-10V,IC=-50mA

100

190

MHz

Output Capacitance

Cob

VCB=-10V, IE=0 f=1MHz

9.0

pF



CLASSIFICATION OF hFE2

RANK

C

D

E

RANGE

120-200

160-300

250-500

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