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MJE2955TL-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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MJE2955TL-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page MJE2955T PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 www.unisonic.com.tw QW-R203-012.E ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector current IC -10 A Base Current IB -6 A Power Dissipation (TA=25°C) TO-220 PD 75 W TO-252 20 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C ELECTRICAL CHARACTERISTICS (T A=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=-200mA -60 V Collector-Base Breakdown Voltage BVCBO IC=-10mA -70 V Emitter-Base Breakdown Voltage BVEBO IE=-10mA -5 V Collector Cut-Off Current ICBO VCB=-70V -1 mA ICEO VCE=-30V -700 A ICEX VCE=-70V, VEB(OFF)=-1.5V -1 mA Emitter Cut-Off Current IEBO VEB=-5V -5 mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-4A, IB=-0.4A -1.1 V VCE(SAT)2 IC=-10A, IB=-3.3A -8.0 Baser-Emitter on Voltage VBE(ON) VCE=-4V, IC=-4A -1.8 V DC Current Gain hFE1 IC=-4A, VCE=-4V 20 100 hFE2 IC=-10A, VCE=-4V 5 Current Gain Bandwidth Product fT VCE=-10V, IC=-0.5A, f=1MHz 2 MHZ |
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