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MIC5013BN Datasheet(PDF) 7 Page - Micrel Semiconductor |
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MIC5013BN Datasheet(HTML) 7 Page - Micrel Semiconductor |
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7 / 16 page  July 2000 7 MIC5013 MIC5013 Micrel Applications Information (Continued) Fault V+ Gate 1 2 3 4 8 MIC5013 Gnd 7 6 5 Thresh Sense Source Input IRF540 10µF 10k Ω 10m Ω IRC 4LPW-5 Figure 2. Low-Side Driver with Current Shunt LOAD Control Input =7 to 15V V + + (International Resistive Company) V LOAD I =20A (trip current) L V TRIP I L V TRIP = 200mV For this example: R = 2200 –1000 V TRIP TH R = S R S R TH Fault V+ Gate 1 2 3 4 8 MIC5013 Gnd 7 6 5 Thresh Sense Source Input =24V IRF541 10µF 100 Ω 20k Ω 24k Ω 18m Ω IRC 4LPW-5* R1 Figure 3. High-Side Driver with Current Shunt LOAD Control Input V + + *International Resistive Company R2 R1= R2=100 Ω R = R = 1mA V 100mV+ 2200 –1000 + I L For this example: I =10A (trip current) L V =100mV TRIP V TRIP V TRIP S R S TH R TH Circuit Topologies The MIC5013 is suited for use in high- or low-side driver applications with over-current protection for both current- sensing and standard MOSFETs. In addition, the MIC5013 works well in applications where, for faster switching times, the supply is bootstrapped from the MOSFET source out- put. Low voltage, high-side drivers (such as shown in the Test Circuit) are the slowest; their speed is reflected in the gate turn-on time specifications. The fastest drivers are the low-side and bootstrapped high-side types. Load current switching times are often much faster than the time to full gate enhancement, depending on the circuit type, the MOSFET, and the load. Turn-off times are essentially the same for all circuits (less than 10 µs to V GS = 1V). The choice of one topology over another is based on a combination of considerations including speed, voltage, and desired sys- tem characteristics. Each topology is described in this section. Note that I L, as used in the design equations, is the load current that just trips the over-current comparator. Low-Side Driver with Current Shunt (Figure 2). The over- current comparator monitors RS and trips if I L × RS exceeds V TRIP. R is selected to produce the desired trip voltage. As a guideline, keep V TRIP within the limits of 100mV and 500mV (R TH = 3.3kΩ to 20kΩ). Thresholds at the high end offer the best noise immunity, but also compromise switch drop (especially in low voltage applications) and power dissipation. The trip current is set higher than the maximum expected load current—typically twice that value. Trip point accuracy is a function of resistor tolerances, comparator offset (only a few millivolts), and threshold bias voltage (V2). The values shown in Figure 2 are designed for a trip current of 20 amperes. It is important to ground pin 4 at the current shunt R S, to eliminate the effects of ground resistance. A key advantage of the low-side topology is that the load supply is limited only by the MOSFET BVDSS rating. Clamping may be required to protect the MOSFET drain terminal from inductive switching transients. The MIC5013 |
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