M28S

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-015.E



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

40

V

Collector-emitter Voltage

20

V

Emitter-Base Voltage

6

V

Collector Current

1.25

A

Base Current

0.4

A

850

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

20

V

Emitter-Base Voltage

6

V

Collector Cutoff Current

100

nA

Emitter Cutoff Current

100

nA

ON CHARACTERISTICS

290

300

1000

300

DC Current Gain (Note)

300

Collector-Emitter Saturation Voltage

0.55

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

100

MHz

Output Capacitance

9

pF



RANK

B

C

D

RANGE

300-550

500-700

650-1000